CVE-2021-42114 Detail
Modified
This vulnerability has been modified since it was last analyzed by the NVD. It is awaiting reanalysis which may result in further changes to the information provided. DescriptionModern DRAM devices (PC-DDR4, LPDDR4X) are affected by a vulnerability in their internal Target Row Refresh (TRR) mitigation against Rowhammer attacks. Novel non-uniform Rowhammer access patterns, consisting of aggressors with different frequencies, phases, and amplitudes allow triggering bit flips on affected memory modules using our Blacksmith fuzzer. The patterns generated by Blacksmith were able to trigger bitflips on all 40 PC-DDR4 DRAM devices in our test pool, which cover the three major DRAM manufacturers: Samsung, SK Hynix, and Micron. This means that, even when chips advertised as Rowhammer-free are used, attackers may still be able to exploit Rowhammer. For example, this enables privilege-escalation attacks against the kernel or binaries such as the sudo binary, and also triggering bit flips in RSA-2048 keys (e.g., SSH keys) to gain cross-tenant virtual-machine access. We can confirm that DRAM devices acquired in July 2020 with DRAM chips from all three major DRAM vendors (Samsung, SK Hynix, Micron) are affected by this vulnerability. For more details, please refer to our publication. Metrics
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CVSS 4.0 Severity and Vector Strings:
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Weakness Enumeration
Known Affected Software Configurations Switch to CPE 2.2CPEs loading, please wait.
Denotes Vulnerable Software Quick InfoCVE Dictionary Entry:CVE-2021-42114 NVD Published Date: 11/16/2021 NVD Last Modified: 11/21/2024 Source: Switzerland Government Common Vulnerability Program |